NE5520279A-T1A 데이터 시트보기 (PDF) - California Eastern Laboratories.

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NE5520279A-T1A

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS

California Eastern Laboratories. 

SILICON POWER MOS FET

NE5520279A

3.2 V OPERATION SILICON RF POWER LDMOS FET

FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS

DESCRIPTION

The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the

transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology

(our WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can deliver 32.0

dBm output power with 45% power added efficiency at 1.8 GHz under the 3.2 V supply voltage.

FEATURES

• High output power

: Pout = 32.0 dBm TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 25 dBm)

• High power added efficiency : add = 45% TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 25 dBm)

• High linear gain

: GL = 10 dB TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 5 dBm)

• Surface mount package

: 5.7  5.7  1.1 mm MAX.

• Single supply

: VDS = 2.8 to 6.0 V

APPLICATION

• Digital cellular phones : 3.2 V DCS1800 Handsets

ORDERING INFORMATION

Part Number

NE5520279A-T1

NE5520279A-T1A

Package

79A

Marking

A2

Supplying Form

• 12 mm wide embossed taping

• Gate pin face the perforation side of the tape

• Qty 1 kpcs/reel

• 12 mm wide embossed taping

• Gate pin face the perforation side of the tape

• Qty 5 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE5520279A-A

Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge

Document No. PU10123EJ03V0DS (3rd edition)

Date Published July 2003 CP(K)

The mark  shows major revised points.

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