NE5520279A-T1A 데이터 시트보기 (PDF) - California Eastern Laboratories.

부품명

상세내역

제조사

NE5520279A-T1A

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS

California Eastern Laboratories. 

NE5520279A

ABSOLUTE MAXIMUM RATINGS (TA = +25C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Drain Current (Pulse Test)

Total Power Dissipation

Channel Temperature

Storage Temperature

Symbol

VDS

VGS

ID

ID Note

Ptot

Tch

Tstg

Ratings

15.0

5.0

0.6

1.2

12.5

125

55 to +125

Note Duty Cycle 50%, Ton  1 s

RECOMMENDED OPERATING CONDITIONS

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Input Power

Symbol

Test Conditions

VDS

VGS

ID

Duty Cycle 50%, Ton  1 s

Pin f = 1.8 GHz, VDS = 3.2 V

Unit

V

V

A

A

W

C

C

MIN.

2.8

0



24

TYP.

3.0

2.0

800

25

MAX.

6.0

3.0

1 000

30

Unit

V

V

mA

dBm

ELECTRICAL CHARACTERISTICS

(TA = +25C, unless otherwise specified, using NEC standard test fixture)

Parameter

Gate to Source Leak Current

Drain to Source Leakage Current

(Zero Gate Voltage Drain Current)

Gate Threshold Voltage

Thermal Resistance

Transconductance

Drain to Source Breakdown Voltage

Output Power

Drain Current

Power Added Efficiency

Linear Gain Note2

Symbol

Test Conditions

IGSS VGS = 5.0 V

IDSS VDS = 6.0 V

Vth

Rth

Gm

BVDSS

Pout

ID

add

GL

VDS = 3.5 V, ID = 1 mA

Channel to Case

VDS = 3.2 V, ID = 700 mA

IDSS = 10 A

f = 1.8 GHz, VDS = 3.2 V,

Pin = 25 dBm,

IDset = 700 mA (RF OFF), Note1

MIN.





1.0





15

30.5



40



TYP.





1.4



1.3

18

32.0

800

45

10

MAX. Unit

100

nA

100

nA

1.9

V

8

C/W



S



V



dBm



mA



%



dB

Notes 1. DC performance is 100% testing. RF performance is testing several samples per wafer.

Wafer rejection criteria for standard devices is 1 reject for several samples.

2. Pin = 5 dBm

2

Data Sheet PU10123EJ03V0DS

Share Link: