MRF6S9060NBR1(2008) 데이터 시트보기 (PDF) - Freescale Semiconductor

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MRF6S9060NBR1
(Rev.:2008)

RF Power Field Effect Transistors

Freescale Semiconductor 

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 ohm system)

VDD = 28 Vdc, IDQ = 500 mA, Pout = 21 W Avg., f = 921 - 960 MHz, GSM EDGE Signal

Power Gain

Gps

—

20

—

dB

Drain Efficiency

ηD

—

46

—

%

Error Vector Magnitude

EVM

—

1.5

—

%

Spectral Regrowth at 400 kHz Offset

SR1

—

- 62

—

dBc

Spectral Regrowth at 600 kHz Offset

SR2

—

- 78

—

dBc

Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 ohm system) VDD = 28 Vdc,

IDQ = 500 mA, Pout = 60 W, f = 921 - 960 MHz

Power Gain

Gps

—

20

—

dB

Drain Efficiency

ηD

—

63

—

%

Input Return Loss

IRL

—

- 12

—

dB

Pout @ 1 dB Compression Point

(f = 940 MHz)

P1dB

—

67

—

W

RF Device Data

Freescale Semiconductor

MRF6S9060NR1 MRF6S9060NBR1

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