Y34NB50 데이터 시트보기 (PDF) - STMicroelectronics
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Y34NB50 Datasheet PDF : 8 Pages
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STY34NB50
THERMAL DATA
Rt hj-ca se
Rt hj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
M ax
Typ
0. 277
30
0.1
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
34
1000
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V(BR)DSS
IDSS
IGSS
P a ram et er
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
oC
Tc = 125
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
500
Typ .
M a x.
Unit
V
10
µA
100
µA
± 100 nA
ON (∗)
Symb ol
V GS(th )
RDS( o n )
ID(o n)
P a ram et er
Test Conditions
Gate T hreshold Voltage VDS = VGS ID = 250 µA
St atic Drain-source O n VGS = 10 V ID = 17 A
Resistance
On Stat e Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
3
Typ .
4
0.11
M a x.
5
0.13
Unit
V
Ω
34
A
DYNAMIC
Symb ol
gfs (∗)
Ciss
Coss
Crss
P a ram et er
Forward
T r ans c on duc ta nc e
Input Capacitance
Output Capacitance
Reverse Transfer
Ca pac i ta nc e
Test Conditions
VDS > ID(on) x RDS(on)max ID = 17 A
Min.
18
Typ .
20
M a x.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
7000 9100 pF
950 1235 pF
80 104 pF
2/8
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