STP11NM60 데이터 시트보기 (PDF) - Unspecified

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STP11NM60

N-channel 650V @ T Jmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET

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STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VGS

ID

ID

IDM(2)

PTOT

dv/dt(3)

Gate- source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC=100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating Factor

Peak diode recovery voltage slope

VISO Insulation withstand voltage (DC)

TJ

Operating junction temperature

Tstg

Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 11A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Value

Unit

TO-220/D²PAK/I²PAK TO-220FP

±30

11

7

44

160

1.28

15

--

-65 to 150

150

11(1)

7(1)

44(1)

35

0.28

2500

V

A

A

A

W

W/°C

V/ns

V

°C

°C

Table 2. Thermal data

Symbol

Parameter

Value

Unit

TO-220/D²PAK/I²PAK TO-220FP

Rthj-case

Rthj-a

Tl

Thermal resistance junction-case Max

Thermal resistance junction-ambient Max

Maximum lead temperature for soldering

purpose

0.78

62.5

300

3.57 °C/W

°C/W

°C

Table 3. Avalanche characteristics

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAR

(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS

(starting Tj=25°C, Id=Iar, Vdd=50V)

Value

Unit

5.5

A

350

mJ

3/16

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