3DG122 데이터 시트보기 (PDF) - Unspecified

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3DG122

NPN Silicon High Frequency Middle Power Transistor

Unspecified 

Shaanxi Qunli Electric Co., Ltd

Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China

3DG122

NPN Silicon High Frequency Middle Power Transistor

Features:

1. Using epitaxy planar technology structure. High working frequency. Metallic packaging.

2. Small volume, light weight, easy installation.

3. Use for high frequency oscillation, high frequency small signal amplification, low power source

adjustment circuit.

4. Quality Class: GS, G. Implementation of standards: QZJ840611

TECHNICAL DATA:

Parameter name

Symbols Unit

A

Total Dissipation

Ptot mW

Max. Collector Current ICM mA

Junction Temperature

Tjm °C

Storage Temperature

Tstg

°C

C-B Breakdown Voltage V(BR)CBO V

40

C-E Breakdown Voltage V(BR)CEO V

30

E-B Breakdown Voltage V(BR)EBO V

Collector- Emitter

VCE(sat) V

Saturation Voltage Drop

Base- Emitter Saturation

VBE(sat) V

Voltage Drop

C-B Leakage Current

ICBO uA

C-E Leakage Current

ICEO uA

E-B Leakage Current

IEBO uA

DC Current Gain

hFE

Specifications

B

C

500

100

175

-55~+175

60

40

45

30

4

0.5

1.0

0.1

0.2

0.1

25~270

Transition frequency

fT MHz 500

500

700

hFE Colored:

Color

hFE

Orange

25~40

Yellow

40~55

Green

55~80

Blue

80~120

(Ta = 25°C )

Test Condition

D

Ta=25°C

60

IC=0.1mA

45

IE=0.1mA

IC=50mA

IB=5mA

VCB=10V

VCE=10V

VEB=1.5V

VCE=10V, IC=30mA

VCE=10V, IC=30mA

700

f=100MHz

Purple

120~180

Gray

180~270

Outline and Dimensions:

Contact:Jiandong Lei

Tel.:+86-917-6293906

Fax:+86-917-6297928

sxqlljd@hotmail.com 245

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