5Q1565RF 데이터 시트보기 (PDF) - Fairchild Semiconductor
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5Q1565RF Datasheet PDF : 16 Pages
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KA5Q-SERIES
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
KA5Q0765RT
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance(1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
KA5Q12656RT/KA5Q1265RF
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
Symbol
Conditions
Min. Typ. Max. Unit
BVDSS VGS=0V, ID=50µA
650 -
-
V
VDS=Max., Rating, VGS=0V -
IDSS
VDS=0.8Max., Rating,
VGS=0V, TC=85°C
-
- 200 µA
- 300 µA
RDS(on) VGS=10V, ID=4.0A
-
1.3 1.6 Ω
Ciss
Coss
Crss
VGS=0V, VDS=25V,
f = 1MHz
- 1110 -
- 105 -
pF
-
50
-
td(on)
tr
td(off)
tf
VDD=0.5BVDSS, ID=7.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-
25
-
-
55
-
-
80
-
nS
-
50
-
Qg
VGS=10V, ID=7.0A,
VDS=0.5BVDSS(MOSFET
Qgs
Switching time are
Essentially independent of
Qgd Operating temperature)
-
57 74
- 9.3 -
nC
- 29.3 -
BVDSS VGS=0V, ID=50µA
650 -
-
V
VDS=Max., Rating, VGS=0V -
- 200 µA
IDSS
VDS=0.8Max., Rating,
VGS=0V, TC=85°C
-
- 300 µA
RDS(on) VGS=10V, ID=6A
-
0.7 0.9 Ω
Ciss
Coss
Crss
VGS=0V, VDS=25V,
f = 1MHz
- 1820 -
- 185 -
pF
-
32
-
td(on)
tr
td(off)
tf
VDD=0.5BVDSS, ID=12.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-
38
-
- 120 -
- 200 -
nS
- 100 -
Qg
VGS=10V, ID=12.0A,
VDS=0.5BVDSS(MOSFET
-
60 78
Qgs
Switching time are
-
10
-
Essentially independent of
nC
Qgd Operating temperature)
-
30
-
4
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