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5Q1565RF 데이터 시트보기 (PDF) - Fairchild Semiconductor

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5Q1565RF
Fairchild
Fairchild Semiconductor Fairchild
5Q1565RF Datasheet PDF : 16 Pages
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KA5Q-SERIES
Absolute Maximum Ratings (SFET Part)
(Ta=25°C, unless otherwise specified)
Characteristic
KA5Q1565RF
Drain-Source Breakdown Voltage
Symbol
BVDSS
Zero Gate Voltage Drain Current
IDSS
Static Drain-Source on Resistance (Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
RDS(ON)
Ciss
Coss
Crss
td(on)
tr
td(off)
Fall Time
tf
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
Gate-Source Charge
Qgs
Gate-Drain (Miller) Charge
Qgd
Test condition
VGS=0V, ID=50µA
VDS=Max., Rating,
VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=85°C
VGS=10V, ID=7.3A
VGS=0V, VDS=25V,
f=1MHz
VDD=0.5BVDSS, ID=14.6A
(MOSFET switching
time are essentially
independent of
operating temperature)
VGS=10V, ID=14.6A,
VDS=0.8BVDSS (MOSFET
switching time are
essentially independent of
operating temperature)
Min. Typ. Max. Unit
650 -
-
V
-
- 200 µA
-
- 300 µA
- 0.5 0.65 W
- 2580 -
- 270 -
pF
-
50
-
-
50
-
- 155 -
- 270 -
nS
- 125 -
-
90 117
-
15
-
nC
-
45
-
Note:
1. Pulse test: Pulse width 300µS, duty cycle 2%
5

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