AT-41511 데이터 시트보기 (PDF) - Unspecified

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AT-41511

General Purpose, Low Noise NPN Silicon Bipolar Transistor

Unspecified 

General Purpose, Low Noise

NPN␣ Silicon Bipolar Transistor

Technical Data

AT-41511

AT-41533

Features

• General Purpose NPN

Bipolar Transistor

• 900 MHz Performance:

AT-41511: 1 dB NF, 15.5 dB GA

AT-41533: 1 dB NF, 14.5 dB GA

• Characterized for 3, 5, and

8 Volt Use

• SOT-23 and SOT-143 SMT

Plastic Packages

• Tape-and-Reel Packaging

Option Available[1]

Outline Drawing

EMITTER COLLECTOR

415

BASE EMITTER

SOT 143 (AT-41511)

COLLECTOR

415

Description

Hewlett-Packard’s AT-41511 and

AT-41533 are general purpose

NPN bipolar transistors that offer

excellent high frequency

performance at an economical

price. The AT-41533 uses the

3␣ lead SOT-23, while the AT-415 11

places the same die in the lower

parasitic 4 lead SOT-143. Both

packages are industry standard,

and compatible with high volume

surface mount assembly

techniques.

The 4 micron emitter-to-emitter

pitch of these transistors yields

high performance products that

can perform a multiplicity of

tasks. The 14 emitter finger

interdigitated geometry yields an

intermediate-sized transistor with

easy to match to impedances, low

noise figure, and moderate

power.

Optimized for best performace

from a 5 to 8 volt bias supply,

these transistors are also good

performers at 2.7 V. Applications

include use in wireless systems as

an LNA, gain stage, buffer,

oscillator, or active mixer.

An optimum noise match near

50␣ ohms at 900 MHz makes these

devices particularly easy to use as

LNAs. Typical amplifier designs

at 900 MHz yield 1 dB noise

figures with 15 dB or more

associated gain at a 5 V, 5 mA

bias, with good gain and noise

figure obtainable at biases as low

as 2 mA.

The AT-415 series bipolar

transistors are fabricated using

Hewlett-Packard’s 10 GHz fT Self-

Aligned-Transistor (SAT) process.

The die are nitride passivated for

surface protection. Excellent

device uniformity, performance

and reliability are produced by

the use of ion-implantation, self-

alignment techniques, and gold

metalization in the fabrication of

these devices.

BASE EMITTER

SOT 23 (AT-41533)

1. Refer to “Tape-and-Reel Packaging for

Semiconductor Devices.”

5965-8929E

4-134

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