HAT2167H-EL-E 데이터 시트보기 (PDF) - Renesas Electronics
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HAT2167H-EL-E Datasheet PDF : 8 Pages
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HAT2167H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V 3.0 V
Pulse Test
40
4.5 V
2.8 V
30
2.6 V
20
2.4 V
10
VGS = 2.2 V
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
300
200
ID = 50 A
20 A
100
10 A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.5.00 Sep 20, 2005 page 3 of 7
Maximum Safe Operation Area
500
10 µs
100
10
1
DC
OpePraWtio=n
1 ms 100
10 ms
Tc = 25 °C
µs
Operation in
this area is
0.1 limited by RDS(on)
Ta = 25°C
0.01 1 shot Pulse
0.1 0.3 1 3 10 30 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
25°C
-25°C
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
VGS = 4.5 V
5
10 V
2
Pulse Test
1
1 0.3 10 3 100 30 1000
Drain Current ID (A)
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