TEA2025 데이터 시트보기 (PDF) - STMicroelectronics
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TEA2025 Datasheet PDF : 9 Pages
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TEA2025B - TEA2025D
POWERDIP 12+2+2 PIN CONNECTION (Top view)
BRIDGE
1
OUT.2
2
BOOT.2
3
GND
4
GND
5
FEEDBACK
6
IN.2 (+)
7
SVR
8
16
+Vs
15
OUT.1
14
BOOT.1
13
GND
12
GND
11
FEEDBACK
10
IN.1 (+)
9
GND (sub.)
SO 12+4+4 PIN CONNECTION (Top view)
BRIDGE
OUT 2
BOOT 2
GND
GND
GND
GND
FEEDBACK
IN 2(+)
SVR
1
20
2
19
3
18
4
17
5
16
6
15
7
14
8
13
9
12
10
11
D94AU119
VCC
OUT 1
BOOT 1
GND
GND
GND
GND
FEEDBACK
IN 1(+)
GND(Sub)
THERMAL DATA
Symbol
Rth j-case
Rth j-amb
Description
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
SO 12+4+4 (*) PDIP 12+2+2 (**) Unit
Max
15
Max
65
15
°C/W
60
°C/W
(*) The Rth j-amb is measured with 4sq cm copper area heatsink
(**) The Rth j-amb is measured on devices bonded on a 10 x 5 x 0.15cm glass-epoxy substrate with a 35µm thick copper surface of 5 cm2.
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