SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2394
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=50µA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50µA ;IC=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.2A
ICBO
Collector cut-off current
VCB=60V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=5V;f=5MHz
MIN TYP. MAX UNIT
60
V
80
V
7
V
1.0
V
1.5
V
10
µA
10
µA
100
320
35
pF
8
MHz
hFE Classifications
E
F
100-200 160-320
2