FCPF7N60YDTU 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FCPF7N60YDTU Datasheet PDF : 11 Pages
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Package Marking and Ordering Information
Part Number
FCP7N60
FCPF7N60
FCPF7N60YDTU
Top Mark
FCP7N60
FCPF7N60
FCPF7N60
Package
TO220
TO220F
TO-220F
(Y-formed)
Packing Method
Tube
Tube
Tube
Reel Size
N/A
N/A
N/A
Tape Width
N/A
N/A
N/A
Quantity
50 units
50 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS
/ ΔTJ
BVDS
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
VGS = 0 V, ID = 250 μA, TJ = 25°C
VGS = 0 V, ID = 250 μA, TJ = 150°C
ID = 250 μA, Referenced to 25°C
VGS = 0 V, ID = 7 A
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 3.5 A
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 3.5 A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss(eff.) Effective Output Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 300 V, ID = 7 A,
VGS = 10 V, RG = 25 Ω
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 480 V, ID = 7 A,
VGS = 10 V
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4)
(Note 4)
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 7 A,
dIF/dt =100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 3.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 7 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Min.
600
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3.0
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Typ.
--
650
0.6
700
--
--
--
--
--
0.53
6
710
380
34
22
60
35
55
75
32
23
4.2
11.5
--
--
--
360
4.5
Max. Unit
--
V
--
V
--
V/°C
--
V
1
μA
10
μA
100 nA
-100 nA
5.0
V
0.6
Ω
--
S
920 pF
500
pF
--
pF
29
pF
--
pF
80
ns
120
ns
160
ns
75
ns
30
nC
5.5
nC
--
nC
7
A
21
A
1.4
V
--
ns
--
μC
©2005 Fairchild Semiconductor Corporation
2
FCP7N60 / FCPF7N60 Rev. C1
www.fairchildsemi.com
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