2SK3565(2002) 데이터 시트보기 (PDF) - Toshiba
부품명
상세내역
제조사
2SK3565 Datasheet PDF : 3 Pages
| |||
TENTATIVE
2SK3565
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±30 V, VDS = 0 V
±10
µA
V (BR) GSS IG =±10 µA, VGS = 0 V
±30
V
IDSS
VDS = 720 V, VGS = 0 V
100
µA
V (BR) DSS ID = 10 mA, VGS = 0 V
900
V
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
RDS (ON) VGS = 10 V, ID = 3 A
2.0 2.5
Ω
Yfs
VDS = 20 V, ID = 3 A
2.0 4.5
S
Ciss
1150
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
20
pF
Coss
100
tr
10 V
VGS
ID = 3 A VOUT
30
0V
ton
4.7 Ω
RL =
70
66.7 Ω
ns
tf
60
VDD ∼− 200 V
toff
Duty <= 1%, tw = 10 µs
170
Qg
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 5 A
Qgd
28
17
nC
11
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
5
A
15
A
−1.7
V
900
ns
5.4
µC
2
2002-12-11
Share Link: 