RES100N03 데이터 시트보기 (PDF) - ROHM Semiconductor
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RES100N03 Datasheet PDF : 4 Pages
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Transistors
zThermal resistance (Ta = 25°C)
Parameter
Symbol
Channel to Ambient
Rth (ch-A)
Limits
62.5
Unit
°C / W
RES100N03
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-Source Leakage
IGSS
−
−
±10 µA VGS=±20V, VDS=0V
Drain-Source Breakdown Voltage V (BR)DSS 30
−
Zero Gate Voltage Drain Current
IDSS
−
−
−
V ID=1mA, VGS=0V
1
µA VDS=30V, VGS=0V
Gate Threshold Voltage
VGS (th) 1.0
−
2.5
V VDS=10V, ID=1mA
Static Drain-Source On-State
Resistance
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
∗Pulsed
−
RDS
∗
(on)
−
−
l Yfs l ∗ 10
Ciss
−
Coss
−
Crss
−
td(on) ∗
−
tr ∗ −
td(off) ∗
−
tf ∗ −
Qg ∗ −
Qgs ∗ −
Qgd ∗ −
10 13
15 20
16 21
−
−
1600 −
900 −
280 −
17
−
50
−
75
−
55
−
28.5 57.0
4.9
−
5.8
−
ID=10A, VGS=10V
mΩ ID=10A, VGS=4.5V
ID=10A, VGS=4V
S ID=10A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=5A, VDD 5V
ns VGS=10V
ns RL=3Ω
ns RGS=10Ω
nC VDD=15V
nC VGS=10V
nC ID=10A
zBody diode characteristics (Source-Drain Characteristics) (Ta = 25°C)
Parameter
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
∗Pulsed
Symbol
VSD ∗
trr ∗
Qrr ∗
Min.
−
−
−
Typ. Max. Unit
−
1.5
V
260 −
ns
290
−
nC
Test Conditions
Is=5.2A, VGS=0V
IDR=5.2A, VGS=0V
di/dt=100A/µs
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