FDS4435BZ_07 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS4435BZ_07 Datasheet PDF : 6 Pages
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FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20mΩ
Features
Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A
Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and current handling capability
Termination is Lead-free and RoHS compliant
June 2007
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
D
D
D
D
Pin 1
SO-8
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
EAS
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
TA = 25°C
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
(Note 4)
Ratings
-30
±25
-8.8
-50
2.5
1.0
24
-55 to +150
Units
V
V
A
W
mJ
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
25
(Note 1a)
50
°C/W
Device Marking
FDS4435BZ
Device
FDS4435BZ
Package
SO-8
Reel Size
13’’
Tape Width
12mm
Quantity
2500units
©2007 Fairchild Semiconductor Corporation
1
FDS4435BZ Rev.C
www.fairchildsemi.com
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