FDS4435BZ_07 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
제조사
FDS4435BZ_07 Datasheet PDF : 6 Pages
| |||
Typical Characteristics TJ = 25°C unless otherwise noted
50
VGS = -10V
VGS = -5V
40
VGS = -4.5V
30
20
VGS = -4V
10
0
0
VGS = -3.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
1
2
3
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
4.0
VGS = -3.5V
3.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
3.0
VGS = -4.5V
2.5
VGS = -4V
VGS = -5V
2.0
1.5
VGS = -10V
1.0
0.5
0
10
20
30
40
50
-ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = -8.8A
VGS = -10V
1.4
60
ID = -8.8A PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
50
1.2
40
1.0
TJ = 125oC
30
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
20
TJ = 25oC
10
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
VDS = -5V
30
20
TJ = 150oC
10
TJ = 25oC
TJ =-55oC
0
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
VGS = 0V
10
1
0.1
0.01
0.001
TJ = 150oC
TJ = 25oC
TJ = -55oC
0.0001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2007 Fairchild Semiconductor Corporation
3
FDS4435BZ Rev.C
www.fairchildsemi.com
Share Link: 