K2481 데이터 시트보기 (PDF) - Renesas Electronics

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K2481

MOS FIELD EFFECT TRANSISTOR / N-CHANNEL 2SK2481

Renesas Electronics 

SINGLE AVALANCHE CURRENT vs.

INDUCTIVE LOAD

100

10

IAS = 4 A

1.0

EAS = 65.9 mJ

VDD = 150 V

VGS = 20 V → 0

RG = 25 Ω

100 µ

1m

10 m

L - Inductive Load - H

100 m

2SK2481

SINGLE AVALANCHE ENERGY

DERATING FACTOR

160

VDD = 150 V

140

RG = 25 Ω

VGS = 20 V → 0

IAS ≤ 4.0 A

120

100

80

60

40

20

0

25 50 75 100 125 150

Starting Tch - Starting Channel Temperature - ˚C

6

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