DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TLP3111(F) 데이터 시트보기 (PDF) - Toshiba

부품명
상세내역
제조사
TLP3111(F) Datasheet PDF : 6 Pages
1 2 3 4 5 6
TLP3111
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating (Ta 25°C)
Reverse voltage
Junction temperature
Offstate output voltage
Onstate current
On-State Current Derating (Ta 25°C)
Junction temperature
Storage temperature
Operating temperature
Soldering temperature (10 s)
Isolation voltage (AC, 1 min., R.H. 60%) (Note 1)
IF
ΔIF/°C
VR
Tj
VOFF
ION
ΔION/°C
Tj
Tstg
Topr
Tsol
BVS
50
0.5
6
125
80
100
1.0
125
40 to 125
20 to 85
260
1500
mA
mA/°C
V
°C
V
mA
mA/°C
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1): Device considered a twoterminal device: Pins 1 and 3 shorted together, and pins 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min. Typ. Max. Unit
Supply voltage
Forward current
Onstate current
Operating temperature
VOFF
IF
ION
Topr
64
V
10
30
mA
100 mA
-20
65
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse voltage
Capacitance
Offstate current
Symbol
VF
IR
CT
IOFF
Test Condition
IF = 20 mA
VR = 6 V
V = 0, f = 1 MHz
VOFF = 30 V, Ta = 50°C
Capacitance
COFF
V = 0, f = 1 MHz
Min. Typ. Max. Unit
1.0 1.2 1.4
V
10
μA
15
pF
— 0.05
1
nA
11
15
pF
2
2009-02-12

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]