TK13A60D 데이터 시트보기 (PDF) - Toshiba

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TK13A60D

Silicon N-Channel MOS Type (π -MOSⅦ ) Field Effect Transistor

Toshiba 

TK13A60D

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source ON-resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

Rise time

Switching time

Turn-on time

Fall time

Turn-off time

Total gate charge

Gate-source charge

Gate-drain charge

Symbol

Test Condition

Min Typ. Max Unit

IGSS

VGS = ±30 V, VDS = 0 V

⎯

⎯

±1

μA

IDSS

VDS = 600 V, VGS = 0 V

⎯

⎯

10

μA

V (BR) DSS ID = 10 mA, VGS = 0 V

600 ⎯

⎯

V

Vth

VDS = 10 V, ID = 1 mA

2.0

⎯

4.0

V

RDS (ON) VGS = 10 V, ID = 6.5 A

⎯ 0.33 0.43 Ω

⎪Yfs⎪

VDS = 10 V, ID = 6.5 A

1.8 6.5

⎯

S

Ciss

⎯ 2300 ⎯

Crss

VDS = 25 V, VGS = 0 V, f = 1 MHz

⎯

10

⎯

pF

Coss

⎯ 250 ⎯

tr

10 V

VGS

ID = 6.5 A VOUT

⎯

50

⎯

0V

ton

50 Ω

RL =

30 Ω

⎯ 100 ⎯

ns

tf

⎯

25

⎯

VDD ≈ 200 V

toff

Duty ≤ 1%, tw = 10 μs

⎯ 140 ⎯

Qg

Qgs

VDD ≈ 400 V, VGS = 10 V, ID = 13 A

Qgd

⎯

40

⎯

⎯

25

⎯

nC

⎯

15

⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

⎯

⎯

IDR = 13 A, VGS = 0 V

IDR = 13 A, VGS = 0 V,

dIDR/dt = 100 A/μs

Min Typ. Max Unit

⎯

⎯

13

A

⎯

⎯

52

A

⎯

⎯

−1.7

V

⎯ 1600 ⎯

ns

⎯

20

⎯

μC

Marking

K13A60D

Part No. (or abbreviation code)

Lot No.

A line indicates

Lead(Pb)-Free Finish

2

2008-09-16

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