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2SK3561 데이터 시트보기 (PDF) - Toshiba
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2SK3561
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Toshiba
2SK3561 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
10
COMMON SOURCE
Tc
=
25°C
10
、
15
PULSE TEST
8
5.25
6
5
6
4.75
4
4.5
4.25
2
VGS
=
4 V
0
0
2
4
6
8
DRAIN-SOURCE VOLTAGE V
DS
10
(V)
2SK3561
I
D
– V
DS
20
COMMON SOURCE
10
、
15
6
Tc
=
25°C
PULSE TEST
16
5.5
12
5
8
4.5
4
VGS
=
4 V
0
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
– V
GS
20
COMMON SOURCE
VDS
=
20 V
16
PULSE TEST
12
8
Tc
= −
55°C
4
100
25
0
0
2
4
6
8
GATE-SOURCE VOLTAGE V
GS
10
(V)
V
DS
– V
GS
10
COMMON SOURCE
Tc
=
25
℃
8
PULSE TEST
6
ID
=
8 A
4
4
2
2
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
⎪
Y
fs
⎪
– I
D
100
10
1
0.1
0.1
Tc
= −
55°C
Tc
= −
55°C
25
100
25
100
COMMON SOURCE
VDS
=
10 V
PULSE TEST
1
10
100
DRAIN CURRENT I
D
(A)
R
DS (ON)
– I
D
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
1
VGS
=
10 V
、
15V
0.1
0.1
1
10
100
DRAIN CURRENT I
D
(A)
3
2009-09-29
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