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2SK3561 데이터 시트보기 (PDF) - Toshiba
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2SK3561
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Toshiba
2SK3561 Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
2.0
COMMON SOURCE
VGS
=
10 V
1.6 PULSE TEST
1.2
ID
=
8 A
4
0.8
2
0.4
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
2SK3561
I
DR
– V
DS
100
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
1
10
5
3
1
VGS
=
0,
−
1 V
0.1
0
−
0.2
−
0.4
−
0.6
−
0.8
−
1.0
−
1.2
DRAIN-SOURCE VOLTAGE V
DS
(V)
10000
CAPACITANCE – V
DS
1000
100
Ciss
Coss
10
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE V
DS
(V)
V
th
– Tc
5
4
3
2
COMMON SOURCE
1
VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P
D
– Tc
60
40
20
0
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
400
300
200
100
0
0
VDS
16
VDD
=
100 V
400
12
200
8
VGS
COMMON SOURCE
ID
=
8 A
4
Tc
=
25°C
PULSE TEST
0
10
20
30
40
50
TOTAL GATE CHARGE Q
g
(nC)
4
2009-09-29
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