RN2301(2014) 데이터 시트보기 (PDF) - Toshiba
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RN2301
(Rev.:2014)
(Rev.:2014)
Toshiba
RN2301 Datasheet PDF : 7 Pages
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RN2301~RN2306
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2301, RN2302, RN2303
RN2304, RN2305, RN2306
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN1301 to RN1306
Equivalent Circuit
Bias Resistor Values
Type No. R1 (kΩ) R2 (kΩ)
RN2301
4.7
4.7
RN2302
10
10
RN2303
22
22
RN2304
47
47
RN2305
2.2
47
RN2306
4.7
47
Absolute Maximum Ratings (Ta = 25°C)
USM
JEDEC
JEITA
TOSHIBA
Weight: 0.006g
―
SC-70
2-2E1A
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2301 to RN2306
RN2301 to RN2304
RN2305, RN2306
RN2301 to RN2306
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
−50
V
−50
V
−10
V
−5
−100
mA
100
mW
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1987-09
1
2014-03-01
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