STK630 데이터 시트보기 (PDF) - AUK -> KODENSHI CORP

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STK630

STK630, STK630F / Power MOSFET

AUK -> KODENSHI CORP 

Absolute maximum ratings

Characteristic

Drain-source voltage

Gate-source voltage

Drain current (DC) *

Drain current (Pulsed) *

Drain power dissipation (TC=25℃)

Single pulsed avalanche energy ②

Avalanche current (Repetitive) ①

Repetitive avalanche energy

①

Junction temperature

Storage temperature range

* Limited by maximum junction temperature

Thermal Resistance

Characteristic

Thermal resistance junction-case

Thermal resistance junction-ambient

STK630F

Symbol

VDSS

VGSS

ID

IDP

PD

EAS

IAR

EAR

TJ

Tstg

Rating

200

±30

TC=25℃

9

TC=100℃ 5.7

36

30

54

9

7.2

150

-55~150

Unit

V

V

A

A

A

W

mJ

A

mJ

°C

°C

Symbol

Rth(J-C)

Rth(J-A)

Typ.

-

-

Max.

4.16

62.5

Units

℃/W

KSD-T0O001-001

2

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