STK630F 데이터 시트보기 (PDF) - AUK -> KODENSHI CORP
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STK630F Datasheet PDF : 8 Pages
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STK630F
Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Static drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test Condition
ID=250 ㎂, VGS=0V
ID=250 ㎂, VDS=VGS
VDS=200V, VGS=0V
VDS=0V, VGS=±30V
VGS=10V, ID=4.5A
③
VDS=40V, ID=4.5A
③
VGS=0V, VDS=25V
f=1 ㎒
VDD=100V, ID=9A
RG=12Ω
Fig 13.
③④
VDS=160V, VGS=10V,
ID=9A
Fig 12.
③④
Min.
200
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
3.87
423
80
15
13
13
30
18
18
3.5
6.5
(Tc=25°C)
Max. Unit
-
V
4.0
V
10
㎂
±100 ㎁
0.4
Ω
-
S
-
-
㎊
-
-
-
㎱
-
-
-
-
nC
-
Source-Drain Diode Ratings and Characteristics
Characteristic
Symbol
Test Condition
Source current (DC)
Source current (Pulsed)
Diode forward voltage
IS
Integral reverse diode
①
ISP
in the MOSFET
④
VSD
VGS=0V, IS=9A
Reverse recovery time
Reverse recovery charge
trr
Is=9A, VGS=0V
Qrr
dIS/dt=100A/㎲
④
Min
-
-
-
-
-
Typ
-
-
-
140
0.87
(Tc=25°C)
Max Units
9
A
36
1.5
V
-
ns
-
uC
Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature
② L=1mH, IAS=9A, VDD=50V, RG=27Ω , starting TJ=25℃
③ Pulse Test : Pulse Width≤ 400 ㎲, Duty cycle≤ 2%
④ Essentially independent of operating temperature
KSD-T0O001-001
3
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