TC7PA04FU(2002) 데이터 시트보기 (PDF) - Toshiba

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TC7PA04FU
(Rev.:2002)

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

Toshiba 

DC Characteristics (Ta = -40~85°C, 1.8 V =< VCC < 2.3 V)

Characteristics

Symbol

Test Condition

High-Level Input Voltage

Low-Level Input Voltage

High-Level Output Voltage

Low-Level Output Voltage

Input Leakage Current

Power-off Leakage Current

Quiescent Supply Current

VIH

VIL

VOH

VOL

IIN

IOFF

ICC

¾

¾

VIN = VIL

IOH = -100 mA

IOH = -6 mA

VIN = VIH

IOL = 100 mA

IOL = 6 mA

VIN = 0~3.6 V

VIN, VOUT = 0~3.6 V

VIN = VCC or GND

VCC <= (VIN, VOUT) <= 3.6 V

TC7PA04FU

Min Max Unit

VCC (V)

1.8~2.3

0.7 ´

VCC

¾

V

1.8~2.3

¾

0.2 ´

VCC

1.8

VCC

- 0.2

¾

1.8

1.4

¾

V

1.8

¾

0.2

1.8

¾

0.3

1.8

¾ ±5.0 mA

0

¾ 10.0 mA

1.8

¾ 20.0

mA

1.8

¾ ±20.0

AC Electrical Characteristics (Ta = -40~85°C, input tr = tf = 2.0 ns, CL = 30 pF, RL = 500 W)

Characteristics

Symbol

Test Condition

Propagation delay time

tpLH

(Figure 1 and 2)

tpHL

For CL = 50 pF, add approximately 300 ps to the AC maximum specification.

VCC (V)

1.8

2.5 ± 0.2

3.3 ± 0.3

Min Max Unit

1.0

7.4

0.8

3.7

ns

0.6

2.8

4

2002-08-21

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