TC7PA04FU 데이터 시트보기 (PDF) - Toshiba

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TC7PA04FU

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

Toshiba 

DC Electrical Characteristics (Ta = −40∼85°C, 1.8 V =< VCC < 2.3 V)

TC7PA04FU

Characteristics

High-Level Input Voltage

Low-Level Input Voltage

High-Level Output Voltage

Low-Level Output Voltage

Input Leakage Current

Power-off Leakage Current

Quiescent Supply Current

Symbol

Test Condition

VIH

VIL

VOH

VOL

IIN

IOFF

ICC

⎯

⎯

VIN = VIL

IOH = −100 μA

IOH = −6 mA

VIN = VIH

IOL = 100 μA

IOL = 6 mA

VIN = 0~3.6 V

VIN, VOUT = 0~3.6 V

VIN = VCC or GND

VCC <= (VIN, VOUT) <= 3.6 V

Min Max Unit

VCC (V)

1.8~2.3

0.7 ×

VCC

⎯

V

1.8~2.3

⎯

0.2 ×

VCC

1.8

VCC

− 0.2

⎯

1.8

1.4

⎯

V

1.8

⎯

0.2

1.8

⎯

0.3

1.8

⎯ ±5.0 μA

0

⎯ 10.0 μA

1.8

⎯ 20.0

μA

1.8

⎯ ±20.0

AC Electrical Characteristics (Ta = −40∼85°C, input tr = tf = 2.0 ns, CL = 30 pF, RL = 500 Ω)

Characteristics

Symbol

Test Condition

Propagation delay time

tpLH

(Figure 1 and 2)

tpHL

For CL = 50 pF, add approximately 300 ps to the AC maximum specification.

VCC (V)

1.8

2.5 ± 0.2

3.3 ± 0.3

Min Max Unit

1.0

7.4

0.8

3.7

ns

0.6

2.8

4

2007-11-01

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