2SD5702 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2SD5702

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD5702

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A

VBEsat

Base-emitter saturation voltage

IC=4A; IB=0.8A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=3A ; VCE=5V

fT

Transition frequency

IC=1A ; VCE=10V

VF

Diode forward voltage

tf

Fall time

IF=6A

IC=4A ;IB1=0.8A;IB2=-1.6A

VCC=200V; RL=50@

MIN TYP. MAX UNIT

2.0 5.0

V

1.5

V

10

µA

40

200 mA

10

30

5

15

3

MHz

2.0

V

0.4

µs

2

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