R1LV1616H-I 데이터 시트보기 (PDF) - Renesas Electronics

부품명

상세내역

제조사

R1LV1616H-I

Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit)

Renesas Electronics 

R1LV1616H-I Series

Wide Temperature Range Version

16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit)

REJ03C0195-0101

Rev.1.01

Nov.18.2004

Description

The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit / 2-Mword × 8-bit.

R1LV1616H-I Series has realized higher density, higher performance and low power consumption by

employing CMOS process technology (6-transistor memory cell). It offers low power standby power

dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for

high density surface mounting.

Features

• Single 3.0 V supply: 2.7 V to 3.6 V

• Fast access time: 45/55 ns (max)

• Power dissipation:

 Active: 9 mW/MHz (typ)

 Standby: 1.5 µW (typ)

• Completely static memory.

 No clock or timing strobe required

• Equal access and cycle times

• Common data input and output.

 Three state output

• Battery backup operation.

 2 chip selection for battery backup

• Temperature range: −40 to +85°C

• Byte function (×8 mode) available by BYTE# & A-1.

Rev.1.01, Nov.18.2004, page 1 of 19

Share Link: