AD8042 데이터 시트보기 (PDF) - Analog Devices
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AD8042 Datasheet PDF : 16 Pages
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AD8042
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Supply Voltage
Internal Power Dissipation1
8-Lead PDIP (N)
8-Lead SOIC_N (R)
Input Voltage (Common Mode)
Differential Input Voltage
Output Short-Circuit Duration
Storage Temperature Range (N, R)
Lead Temperature (Soldering, 10 sec)
1 Specification is for the device in free air:
8-Lead PDIP: θJA = 90°C/W
8-Lead SOIC_N: θJA = 155°C/W.
Rating
12.6 V
1.3 W
0.9 W
±VS ± 0.5 V
±3.4 V
Observe Power
Derating Curves
−65°C to +125°C
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8042 is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150°C. Exceeding this limit temporarily
can cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD8042 is internally short-circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the
maximum power derating curves.
2.0
8-LEAD PLASTIC-DIP PACKAGE
1.5
TJ = 150°C
1.0
8-LEAD SOIC PACKAGE
0.5
0
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE (°C)
Figure 4. Maximum Power Dissipation vs. Temperature
ESD CAUTION
Rev. E | Page 6 of 16
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