STPS2545CFP 데이터 시트보기 (PDF) - STMicroelectronics
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STPS2545CFP Datasheet PDF : 10 Pages
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Characteristics
1
Characteristics
STPS2545C
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
45
IF(RMS) Forward rms current
Average forward current
IF(AV) δ = 0.5
TO-220AB D2PAK
TO-220FPAB
Tc =160 °C Per diode
Tc =140 °C Per device
30
12.5
25
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
200
IRRM Repetitive peak reverse current
tp = 2 µs square F=1 kHz
1
IRSM Non repetitive peak reverse current
tp = 100 µs square
2
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
4800
Tstg Storage temperature range
Tj Maximum operating junction temperature(1)
-65 to + 175
175
dV/dt Critical rate of rise reverse voltage
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
10000
Table 3. Thermal resistances
V
A
A
A
A
A
W
°C
°C
V/µs
Symbol
Rth (j-c) Junction to case
Rth (c) Coupling
Parameter
TO-220AB / D2PAK Per diode
TO-220FPAB
TO-220AB / D2PAK Total
TO-220FPAB
TO-220AB / D2PAK
TO-220FPAB
Value
1.6
4
1.1
3.5
0.6
3
Unit
° C/W
° C/W
° C/W
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
2/10
Doc ID 8736 Rev 4
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