STPS1045B-TR 데이터 시트보기 (PDF) - STMicroelectronics
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STPS1045B-TR Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
STPS1045B
Table 2. Absolute ratings (limiting values, at 25 °C unless otherwise stated)
Symbol
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
45
V
IF(RMS) / pin Forward rms current
7
A
IF(AV) Average forward current, square wave Tc = 150 °C, δ 0.5
10
A
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
75
A
PARM Repetitive peak avalanche power
tp = 10 s, Tj = 125 °C
285
W
Tstg
Storage temperature range
-65 to + 175 °C
Tj
Maximum operating junction temperature(1)
175
°C
1. dPtot < 1 condition to avoid thermal runaway for a diode on its own heatsink
dTj Rth(j-a)
Symbol
Rth(j-c)
Table 3. Thermal resistance
Parameter
Value
Junction to case
3
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR (1)
Tj = 25 °C
Reverse leakage current
Tj = 125 °C
Tj = 25 °C
VF(2) Forward voltage drop
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
1. Pulse test: tp = 5 ms, < 2%
2. Pulse test: tp = 380 µs, < 2%
VR = VRRM
IF = 10 A
IF = 20 A
100
A
7
15
mA
0.63
0.50 0.57
V
0.84
0.65 0.72
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.015 IF2(RMS)
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DocID6085 Rev 8
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