FQP13N10 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FQP13N10

N-Channel QFET MOSFET 100 V, 12.8 A, 180 mΩ

Fairchild Semiconductor 

FQP13N10

N-Channel QFET® MOSFET

100 V, 12.8 A, 180 mΩ

Description

This N-Channel enhancement mode power MOSFET is pro-

duced using Fairchild Semiconductor’s proprietary planar stripe

and DMOS technology. This advanced MOSFET technology has

been especially tailored to reduce on-state resistance, and to

provide superior switching performance and high avalanche en-

ergy strength. These devices are suitable for switched mode

power supplies, audio amplifier, DC motor control, and variable

switching power applications.

November 2013

Features

• 12.8 A, 100 V, RDS(on) = 180 mΩ (Max.) @ VGS = 10 V,

ID= 6.4 A

• Low Gate Charge (Typ. 12 nC)

• Low Crss (Typ. 20 pF)

• 100% Avalanche Tested

• 175°C Maximum Junction Temperature Rating

D

GDS

TO-220

G

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol

VDSS

ID

IDM

VGSS

EAS

IAR

EAR

dv/dt

PD

TJ, TSTG

TL

Parameter

Drain-Source Voltage

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

Drain Current

- Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering,

1/8" from Case for 5 seconds

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

Thermal Characteristics

Symbol

RθJC

RθJA

Parameter

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction-to-Ambient, Max.

S

FQP13N10

100

12.8

9.05

51.2

± 25

95

12.8

6.5

6.0

65

0.43

-55 to +175

300

FQP13N10

2.31

62.5

Unit

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

Unit

°C/W

°C/W

©2000 Fairchild Semiconductor Corporation

1

FQP13N10 Rev. C1

www.fairchildsemi.com

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