D1083UK 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc

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D1083UK

ROHS COMPLIANT METAL GATE RF SILICON FET

Semelab - > TT Electronics plc  

SEME

LAB

MECHANICAL DATA

Dimensions in mm (inches)

4

TO–263 PACKAGE

PIN 1 – GATE

PIN 2 – DRAIN

PIN 3 – SOURCE

PIN 4 – DRAIN

TetraFET

D1083UK

METAL GATE RF SILICON FET

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

4W – 28V – 200MHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND

APPLICATIONS

• LOW Crss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 13dB MINIMUM

• SURFACE MOUNT

APPLICATIONS

• LOW COST DC to 200 MHz

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

PD

Power Dissipation

62.5W

BVDSS

Drain – Source Breakdown Voltage

70V

BVGSS

Gate – Source Breakdown Voltage

±20V

ID(sat)

Drain Current

5A

TSTG

Storage Temperature

–65 to 125°C

TJ

Maximum Operating Junction Temperature

150°C

Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk

Prelim. 7/96

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