D1083UK 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc

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D1083UK

ROHS COMPLIANT METAL GATE RF SILICON FET

Semelab - > TT Electronics plc  

SEME

LAB

D1083UK

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)

Parameter

Test Conditions

Drain–Source

BVDSS Breakdown Voltage

VGS = 0

ID = 10mA

IDSS

Zero Gate Voltage

Drain Current

VDS = 28V

VGS = 0

IGSS Gate Leakage Current

VGS(th) Gate Threshold Voltage*

gfs

Forward Transconductance*

GPS Common Source Power Gain

η

Drain Efficiency

VSWR Load Mismatch Tolerance

VGS = 20V

ID = 10mA

VDS = 10V

VDS = 28V

PO = 4W

VDS = 0

VDS = VGS

ID = 1A

IDQ = 0.1A

f = 200MHz

Ciss Input Capacitance

VDS = 0V VGS = –5V f = 1MHz

Coss Output Capacitance

VDS = 28V VGS = 0 f = 1MHz

Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz

* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%

THERMAL DATA

RTHj–case

Thermal Resistance Junction – Case

Min.

70

1

0.8

13

40

20:1

Typ.

Max. Unit

V

1

mA

1

µA

7

V

S

dB

%

—

60

30

pF

2.5

Max. 2°C / W

Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk

Prelim. 7/96

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