FDN308P 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDN308P Datasheet PDF : 5 Pages
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Typical Characteristics
5
ID = -1.5A
4
3
VDS = -5V
-10V
-15V
2
1
0
0
1
2
3
4
5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1ms
10ms
100ms
1
1s
10s
VGS =-4.5V
DC
0.1 SINGLE PULSE
RθJA = 270oC/W
TA = 25oC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
500
f = 1MHz
VGS = 0 V
400
CISS
300
200
COSS
100
CRSS
0
0
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
20
SINGLE PULSE
RθJA = 270°C/W
TA = 25°C
15
10
5
0
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 270 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDN308P Rev B(W)
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