STPS30H100 데이터 시트보기 (PDF) - STMicroelectronics
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STPS30H100 Datasheet PDF : 10 Pages
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Characteristics
1
Characteristics
STPS30H100C
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
100
IF(RMS) Forward rms current
30
IF(AV) Average forward current
Tc = 155 °C Per diode
15
δ = 0.5
Per device
30
IFSM
IRRM
IRSM
PARM
Tstg
Tj
dV/dt
Surge non repetitive forward current tp = 10 ms sinusoidal
250
Repetitive peak reverse current
tp = 2 µs square, F= 1 kHz
1
Non repetitive peak reverse current tp = 100 µs square
3
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C
10800
Storage temperature range
-65 to + 175
Operating junction temperature range(1)
-40 to +175
Critical rate of rise of reverse voltage
10000
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j--–-----a----)
condition
to
avoid
thermal
runaway
for
a
diode
on
its
own
heatsink
Table 3. Thermal resistance
V
A
A
A
A
A
W
°C
°C
V/µs
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
Rth(c) Coupling
Per diode
Total
1.6
0.9
°C/W
0.1
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
IR(1) Reverse leakage current
Tj = 25 °C
Tj = 125 °C
VR = VRRM
VF(2) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 15 A
IF = 30 A
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.54 x IF(AV) + 0.0086 IF2(RMS)
Min. Typ. Max. Unit
5 µA
2
6 mA
0.80
0.64 0.67
V
0.93
0.74 0.8
2/10
Doc ID 6347 Rev 8
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