Characteristics
STPS30H100C
Figure 7.
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
IR(mA)
2E+0
1E+0
Tj=125°C
1E-1
1E-2
Figure 8.
C(pF)
1000
500
Junction capacitance versus
reverse voltage applied (typical
values, per diode)
F=1MHz
VOSC=30mVRMS
Tj=25°C
1E-3
Tj=25°C
200
1E-4
VR(V)
1E-5
100
0 10 20 30 40 50 60 70 80 90 100
1
2
VR(V)
5
10
20
50
100
Figure 9.
Forward voltage drop versus forward current (maximum values, per diode)
IFM(A)
200
100
Tj=125°C
Tj=25°C
10
VFM(V)
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
4/10
Doc ID 6347 Rev 8