STPS30H100CW 데이터 시트보기 (PDF) - STMicroelectronics

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STPS30H100CW

High voltage power Schottky rectifier

STMicroelectronics 

Characteristics

STPS30H100C

Figure 7.

Reverse leakage current versus

reverse voltage applied (typical

values, per diode)

IR(mA)

2E+0

1E+0

Tj=125°C

1E-1

1E-2

Figure 8.

C(pF)

1000

500

Junction capacitance versus

reverse voltage applied (typical

values, per diode)

F=1MHz

VOSC=30mVRMS

Tj=25°C

1E-3

Tj=25°C

200

1E-4

VR(V)

1E-5

100

0 10 20 30 40 50 60 70 80 90 100

1

2

VR(V)

5

10

20

50

100

Figure 9.

Forward voltage drop versus forward current (maximum values, per diode)

IFM(A)

200

100

Tj=125°C

Tj=25°C

10

VFM(V)

1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

4/10

Doc ID 6347 Rev 8

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