STPS3L60QRL 데이터 시트보기 (PDF) - STMicroelectronics

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STPS3L60QRL

Power Schottky rectifier

STMicroelectronics 

Characteristics

STPS3L60

Figure 15. Reverse leakage current versus

reverse voltage applied

(typical values)

IR(mA)

1.E+02

1.E+01

1.E+00

Tj=125°C

Tj=100°C

1.E-01

Figure 16. Junction capacitance versus

reverse voltage applied

(typical values)

C(pF)

1000

F=1MHz

Vosc =30mV

Tj=25°C

100

1.E-02

Tj=25°C

VR(V)

VR(V)

1.E-03

10

0 5 10 15 20 25 30 35 40 45 50 55 60

1

10

100

Figure 17. Forward voltage drop versus

forward current (high level)

IFM(A)

30

25

Tj=100°C

(Typical values)

20

Tj=100°C

(Maximum values)

15

Tj=25°C

(Maximum values)

10

5

VFM(V)

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

Figure 18. Forward voltage drop versus

forward current (low level)

IFM(A)

5

4

Tj=100°C

(Typical values)

3

Tj=100°C

(Maximum values)

2

Tj=25°C

(Maximum values)

1

VFM(V)

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Figure 19. Thermal resistance junction to

ambient versus copper surface

under each lead (SMB)

Rth(j-a)(°C/W)

120

Expoxy printed circuit FR4,

SMB

copper thickness = 35 µm

100

Figure 20. Thermal resistance junction to

ambient versus copper surface

under each lead (SMBflat)

Rth(j-a)(°C/W)

120

100

Expoxy printed circuit FR4,

copper thickness = 35 µm

SMB-Flat

80

80

60

60

40

40

20

S(Cu)(cm²)

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

20

S(Cu)(cm²)

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

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Doc ID 7505 Rev 6

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