STPS3L60S 데이터 시트보기 (PDF) - STMicroelectronics
부품명
상세내역
제조사
STPS3L60S Datasheet PDF : 5 Pages
| |||
STPS3L60S
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
Fig. 5: Non repetitive surge peak forward
current versus overload duration (maximum
values).
IM(A)
14
12
10
8
6
4
IM
2
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=25°C
Tc=50°C
Tc=100°C
1E+0
Fig. 6: Relative variation of thermal impedance
junction to lead versus pulse duration.
Zth(j-l)/Rth(j-l)
1.0
0.9
0.8
0.7
0.6 δ = 0.5
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
0.1
Single pulse
0.0
1E-3
1E-2
T
tp(s)
1E-1
δ=tp/T
tp
1E+0
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
5E+1 IR(mA)
1E+1
Tc=150°C
Tc=125°C
1E+0
1E-1
Tc=100°C
Tc=75°C
Tc=50°C
1E-2
1E-3
0
Tc=25°C
VR(V)
5 10 15 20 25 30 35 40 45 50 55 60
C(pF)
500
200
100
50
20
10
1
F=1MHz
Tj=25°C
VR(V)
10
100
3/5
Share Link: 