STPS640CB(1999) 데이터 시트보기 (PDF) - STMicroelectronics
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STPS640CB Datasheet PDF : 9 Pages
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STPS640
Characteristics
Figure 1.
Average forward power
dissipation versus average
forward current (per diode)
Figure 2.
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
PF(AV)(W)
2.50
2.25
δ = 0.05
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0.0
0.5
1.0
δ = 0.1 δ = 0.2
δ = 0.5
δ=1
T
IF(AV)(A)
1.5
2.0
2.5
δ=tp/T
tp
3.0
3.5
4.0
IF(AV)(A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
T
0.5
δ=tp/T
tp
0.0
0
25
Rth(j-a)=Rth(j-c)
TO-220AB / DPAK
TO-220FPAB
Rth(j-a)=15°C/W
Tamb(°C)
50
75
100
125
150
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
PARM(tp)
PARM(25°C)
1.2
1
0.1
0.8
0.6
0.01
0.001
0.01
0.1
0.4
tp(µs)
0.2
Tj(°C)
0
1
10
100
1000
25
50
75
100
125
150
Figure 5.
Non repetitive surge peak forward
current versus overload duration.
(Maximum values, per diode)
(TO-220AB / DPAK)
Figure 6.
Non repetitive surge peak forward
current versus overload duration.
(Maximum values, per diode)
(TO-220FPAB)
IM(A)
45
40
35
30
25
20
15
10
IM
5
0
1E-3
t
δ=0.5
1E-2
t(s)
1E-1
TC=75°C
TC=100°C
TC=135°C
1E+0
IM(A)
40
35
30
25
20
15
10
IM
5
0
1E-3
t
δ=0.5
1E-2
t(s)
1E-1
TC=75°C
TC=100°C
TC=130°C
1E+0
3/9
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