STPS640CB(1999) 데이터 시트보기 (PDF) - STMicroelectronics
부품명
상세내역
제조사
STPS640CB Datasheet PDF : 9 Pages
| |||
Characteristics
STPS640C
Figure 7.
Relative variation of thermal
transient impedance junction to
case versus pulse duration
(TO-220AB/DPAK)
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
Figure 8.
Relative variation of thermal
impedance junction to case versus
pulse duration
(TO-220FPAB)
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
0.4
δ = 0.2
T
0.2
δ = 0.1
δ=tp/T
tp
1E+0
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
Figure 9.
IR(A)
1E-2
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
Tj=150°C
1E-3
Tj=125°C
Tj=100°C
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
C(pF)
500
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
1E-4
Tj=75°C
VR(V)
1E-5
10
0
5
10
15
20
25
30
35
40
1
2
VR(V)
5
10
20
50
Figure 11.
Forward voltage drop versus
forward current (maximum values,
per diode)
Figure 12.
Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, copper thickness:
35 µm)
IFM(A)
10.0
Rth(j-a)(°C/W)
80
70
Tj=150°C
(typical values)
60
Tj=25°C
50
1.0
40
30
20
VFM(V)
0.1
10
S(Cu)(cm²)
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
4
8
12
16
20
24
28
32
36
40
4/9
Share Link: 