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10DL2CZ 데이터 시트보기 (PDF) - Toshiba

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10DL2CZ Datasheet PDF : 5 Pages
1 2 3 4 5
10DL2CZ47A,10FL2CZ47A,10GL2CZ47A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
10DL2CZ47A, 10FL2CZ47A, 10GL2CZ47A
SWITCHING MODE POWER SUPPLY APPLICATIONS
CONVERTER & CHOPPER APPLICATION
Unit in mm
Repetitive Peak Reverse Voltage : VRRM = 200 V, 300 V, 400 V
Average Output Rectified Current : IO = 10 A
Ultra Fast Reverse-Recovery Time : trr = 35 ns (Max)
Low Switching Losses and Output Noise
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak
Reverse Voltage
10DL2CZ47A
10FL2CZ47A
10GL2CZ47A
Average Output Rectified Current
Peak One Cycle Surge Forward
Current (Sine Wave)
Junction Temperature
Storage Temperature Range
Screw Torque
SYMBOL
VRRM
IO
IFSM
Tj
Tstg
RATING
200
300
400
10
50 (50Hz)
55 (60Hz)
40~150
40~150
0.6
UNIT
V
A
A
°C
°C
N·m
JEDEC
JEITA
TOSHIBA
Weight : 2.0g
12-10C1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Peak Forward
Voltage
10DL2CZ47A
(Note 1) 10FL2CZ47A
10GL2CZ47A
Repetitive Peak
Reverse Current
(Note 1)
10DL2CZ47A
10FL2CZ47A
10GL2CZ47A
Reverse Recovery Time
(Note 1)
Forward Recovery Time
(Note 1)
Thermal Resistance
Note 1 : A value applied to one cell.
SYMBOL
TEST CONDITION
VFM
IFM=5A
IRRM
VRRM=Rated
trr
tfr
Rth (j-c)
IF=2A, di / dt=20A / μs
IF=1A
Total DC, Junction to Case
MIN. TYP. MAX. UNIT
0.98
1.3
V
1.8
10
10 μA
50
ns
ns
°C / W
1
2006-11-08

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