PSMN020-150W 데이터 시트보기 (PDF) - Philips Electronics
부품명
상세내역
제조사
PSMN020-150W Datasheet PDF : 7 Pages
| |||
Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PSMN020-150W
Gate-source voltage, VGS (V)
15
14 ID = 73A
13
12
Tj = 25 C
11
10
9
8
7
6
5
4
3
2
1
0
VDD = 30 V
VDD = 120 V
0 25 50 75 100 125 150 175 200 225 250
Gate charge, QG (nC)
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG)
Source-Drain Diode Current, IF (A)
100
VGS = 0 V
90
80
70
175 C
60
50
Tj = 25 C
40
30
20
10
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Source-Drain Voltage, VSDS (V)
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
Maximum Avalanche Current, IAS (A)
100
25 C
10
Tj prior to avalanche = 150 C
1
0.1
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Fig.15. Maximum permissible non-repetitive
avalanche current (IAS) versus avalanche time (tAV);
unclamped inductive load
November 1999
5
Rev 1.000
Share Link: 