MGF1951A 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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MGF1951A Datasheet PDF : 4 Pages
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PRELIMINARY
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF1951A
Medium Power Microwave MESFET
S PARAMETERS (VDS=3V, ID=30mA, Ta=+25°C)
f
(GHz)
S11
Mag Ang
S21
Mag Ang
S12
Mag Ang
1 0.984 -17.7 4.239 163.2 0.016 78.2
2 0.946 -38.6 4.103 144.3 0.031 64.3
3 0.906 -52.5 3.914 131.2 0.043 54.3
4 0.857 -71.1 3.710 115.9 0.054 44.2
5 0.811 -85.3 3.445 103.3 0.061 35.6
6 0.771 -97.4 3.197 92.5 0.065 29.6
7 0.736 -109.8 2.984 81.7 0.069 23.7
8 0.710 -121.6 2.847 70.7 0.071 19.0
9 0.679 -133.6 2.737 60.4 0.075 15.1
10 0.645 -146.3 2.659 50.1 0.083 11.3
11 0.594 -159.8 2.600 39.5 0.089
2.6
12 0.549 -175.7 2.570 28.4 0.091
-2.7
13 0.508 165.8 2.532 16.2 0.095 -9.0
14 0.481 142.3 2.480
2.5 0.100 -18.0
15 0.472 116.9 2.378 -10.9 0.101 -26.7
16 0.508 92.7 2.289 -23.8 0.103 -34.7
17 0.573 70.4 2.160 -37.5 0.105 -42.9
18 0.646 52.2 1.975 -51.6 0.103 -50.4
S22
Mag Ang
0.581 -11.3
0.565 -26.2
0.548 -34.3
0.518
0.509
-45.5
-54.9
0.500 -61.4
0.502
0.507
0.509
-66.9
-72.1
-75.9
0.513 -79.6
0.496 -84.2
0.472
0.443
0.399
-87.2
-91.4
-96.7
0.342 -101.7
0.279 -107.6
0.211 -112.1
0.135 -115.3
K
MAG/MSG
(dB)
0.18
24.3
0.32
21.3
0.43
19.6
0.53
18.4
0.64
17.5
0.76
16.9
0.86
16.4
0.93
16.0
0.99
15.6
0.99
15.1
1.09
12.8
1.19
11.9
1.27
11.1
1.34
10.5
1.45
9.7
1.47
9.4
1.44
9.2
1.44
8.9
Gate
Source
Source
Drain
S-Parameter Reference Planes
MITSUBISHI
(4/4)
1 Aug 2002
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