2N6297 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2N6297

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2N6296 2N6297

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

2N6296

-60

V(BR)CEO

Collector-emitter

breakdown voltage

IC=-50mA ; IB=0

V

2N6297

-80

VCEsat-1 Collector-emitter saturation voltage IC=-2A ;IB=-8mA

VCEsat-2 Collector-emitter saturation voltage IC=-4A ;IB=-40mA

-2.0

V

-3.0

V

VBEsat

Base-emitter saturation voltage

VBE

Base -emitter on voltage

ICEX

Collector cut-off current

ICEO

Collector cut-off current

IEBO

Emitter cut-off current

IC=-4A ;IB=-40mA

IC=-2A ; VCE=-3V

VCE=RatedVCE;VBE(off)=1.5V

TC=150

VCE=1/2Rated VCEO; IB=0

VEB=-5V; IC=0

-4.0

V

-2.8

V

-0.5

-5.0

mA

-0.5

mA

-2.0

mA

hFE-1

DC current gain

IC=-2A ; VCE=-3V

750

18000

hFE-2

DC current gain

IC=-4A ; VCE=-3V

100

fT

Transition frequency

IC=-1.5A ; VCE=-3V;f=1.0MHz

4.0

MHz

COB

Output capacitance

IE=0 ; VCB=-10V;f=0.1MHz

200

pF

2

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