JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-6A , IB=-0.6A;L=1mH
VCEsat-1 Collector-emitter saturation voltage IC=-6A, IB=-0.3A
VCEsat-2 Collector-emitter saturation voltage IC=-8A, IB=-0.4A
VBEsat-1 Base-emitter saturation voltage
VBEsat-2 Base-emitter saturation voltage
ICBO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
IC=-6A, IB=-0.3A
IC=-8A, IB=-0.4A
VCB=-60V, IE=0
VCE=-60V,VBE=1.5V
Ta=125℃
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-2V
hFE-2
hFE-3
Cob
DC current gain
DC current gain
Output capacitance
IC=-2A ; VCE=-2V
IC=-6A ; VCE=-2V
IE=0 ; VCB=-10V,f=1MHz
fT
Transition frequency
IC=-1A ; VCE=-10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-6A ; RL=8.3Ω
IB1=- IB2=-0.3A
VCC≈-50V
hFE-2 Classifications
M
L
K
100-200 150-300 200-400
Product Specification
2SA1443
MIN TYP. MAX UNIT
-60
V
-0.3
V
-0.5
V
-1.2
V
-1.5
V
-10
μA
-10
μA
-1.0
mA
-10
μA
100
100
400
60
230
pF
80
MHz
0.3
μs
1.5
μs
0.3
μs
2