2SA1659 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SA1659 Datasheet PDF : 3 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1659
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA
ICBO
Collector Cutoff Current
VCB= -160V ; IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE
DC Current Gain
IC= -100mA ; VCE= -5V
COB
Output Capacitance
IE=0 ; VCB= -10V;f= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC=-100m A ; VCE= -10V
MIN TYP. MAX UNIT
-160
V
-1.5 V
-1.0 μA
-1.0 μA
70
240
30
pF
100
MHz
hFE Classifications
O
Y
70-140 120-240
isc Website：www.iscsemi.cn
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