2SC5307 데이터 시트보기 (PDF) - Toshiba
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2SC5307 Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5307
High Voltage Switching Applications
2SC5307
Unit: mm
• High breakdown voltage : VCEO = 400 V
• Low collector-emitter saturation voltage
: VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC (Note 1)
Pulse (Note 1)
Base current
Collector power
dissipation
Ta = 25°C
Ta = 25°C
(Note 2)
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
400
V
400
V
7
V
50
mA
100
25
mA
500
mW
1000
150
°C
−55 to 150
°C
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Ensure that the junction temperature does not exceed 150°C
during use of the device.
Note 2: Mounted on a ceramic substrate (250 mm2 × 0.8 mmt)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2011-04-27
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